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Package Marking and Ordering Information
Device Marking
FCP16N60
FCPF16N60
Device
FCP16N60
FCPF16N60
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
BV DSS
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0V, I D = 250 μ A, T J = 25 ° C
V GS = 0V, I D = 250 μ A, T J = 150 ° C
I D = 250 μ A, Referenced to 25 ° C
V GS = 0V, I D = 16A
V DS = 600V, V GS = 0V
V DS = 480V, T C = 125 ° C
V GS = 30V, V DS = 0V
V GS = -30V, V DS = 0V
600
--
--
--
--
--
--
--
--
650
0.6
700
--
--
--
--
--
--
--
--
1
10
100
-100
V
V
V/ ° C
V
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 8A
3.0
--
--
0.22
5.0
0.26
V
Ω
g FS
Forward Transconductance
V DS = 40V, I D = 8A
(Note 4)
--
11.5
--
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 25V, V GS = 0V,
f = 1.0MHz
V DS = 480V, V GS = 0V, f = 1.0MHz
V DS = 0V to 400V, V GS = 0V
--
--
--
--
--
1730
960
85
45
110
2250
1150
--
60
--
pF
pF
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 300V, I D = 16A
R G = 25 Ω
V DS = 480V, I D = 16A
V GS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
42
130
165
90
55
10.5
28
85
270
340
190
70
13
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
16
48
A
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0V, I S =16A
--
--
1.4
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 16A
dI F /dt =100A/ μ s
(Note 4)
--
--
435
7.0
--
--
ns
μ C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I AS = 8A, V DD = 50V, R G = 25 Ω , Starting T J = 25 ° C
3. I SD ≤ 16A, di/dt ≤ 200A/ μ s, V DD ≤ BV DSS , Starting T J = 25 ° C
4. Pulse Test: Pulse width ≤ 300 μ s, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCP16N60 / FCPF16N60 Rev. B 1
2
www.fairchildsemi.com
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